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  parameter max. units v r cathode-to-anode voltage 1200 v i f @ t c = 100c continuous forward current 30 i fsm single pulse forward current 120 i frm maximum repetitive forward current 90 p d @ t c = 25c maximum power dissipation p d @ t c = 100c maximum power dissipation t j operating junction and t stg storage temperature range preliminary data sheet pd-2.604 rev. a 12/00 ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? specified at operating conditions benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count features description international rectifier's HFA30PB120 is a state of the art ultra fast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 1200 volts and 30 amps continuous current, the HFA30PB120 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultra fast recovery time, the hexfred product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred HFA30PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ultrafast, soft recovery diode hexfred tm HFA30PB120 absolute maximum ratings -55 to +150 w a c v r = 1200v v f (typ.)* = 2.4v i f(av) = 30a q rr (typ.)= 490nc i rrm (typ.) = 8.1a t rr (typ.) = 37ns di (rec)m /dt (typ.)* = 130a/s * 125c 1 1 base cathode 2 3 cathode anode 2 4 to-247ac (modified)
HFA30PB120 preliminary data sheet pd-2.604 rev. a 12/00 2 www.irf.com parameter min. typ. max. units t lead ! lead temperature ???? ???? 300 c r jc thermal resistance, junction to case ???? ???? 0.83 r ja " thermal resistance, junction to ambient ???? ???? 80 r cs # thermal resistance, case to heat sink ???? 0.50 ???? ???? 2.0 ???? g ???? 0.07 ???? (oz) 6.0 ???? 12 kg-cm 5.0 ???? 10 lbf?in parameter min. typ. max. units test conditions t rr reverse recovery time ??? 30 ??? i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 ??? 90 135 ns t j = 25c t rr2 ??? 164 245 t j = 125c i f = 16a i rrm1 peak recovery current ??? 5.8 10 t j = 25c i rrm2 ??? 8.3 15 t j = 125c v r = 200v q rr1 reverse recovery charge ??? 260 675 t j = 25c q rr2 ??? 680 1838 t j = 125c di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ??? 120 ??? t j = 25c di (rec)m /dt2 during t b ??? 76 ??? t j = 125c parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 1200 ??? ??? v i r = 100a ??? 2.5 3.0 i f = 16a ??? 3.2 3.93 v i f = 32a ??? 2.3 2.7 i f = 16a, t j = 125c ??? 0.75 20 v r = v r rated ??? 375 2000 t j = 125c, v r = 0.8 x v r rated d rated c t junction capacitance ??? 27 40 pf v r = 200v measured lead to lead 5mm from package body electrical characteristics @ t j = 25c (unless otherwise specified) dynamic recovery characteristics @ t j = 25c (unless otherwise specified) a/s nc a l s series inductance ??? 8.0 ??? nh see fig. 3 see fig. 2 see fig. 1 thermal - mechanical characteristics see fig. 5, 10 see fig. 6 see fig. 7 see fig. 8 k/w v fm max forward voltage a max reverse leakage current i rm wt weight mounting torque $ l=100h, duty cycle limited by max t j !% 0.063 in. from case (1.6mm) for 10 sec " typical socket mount # mounting surface, flat, smooth and greased
HFA30PB120 preliminary data sheet pd-2.604 rev. a 12/00 3 www.irf.com 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust
HFA30PB120 preliminary data sheet pd-2.604 rev. a 12/00 4 www.irf.com conforms to jedec outline to-247ac(modified) dimensions in millimeters and inches world headquarters: 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. european headquarters: hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. ir canada: 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. ir germany: saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. ir italy: via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. ir southeast asia: 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. ir taiwan: 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change w ithout notice.


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